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Hi all,I am doing a project that needs me to design a PMOS transistor with a channel length of 65 nanometers using Silvaco TCAD tools. As you may know, there are examples provided in the software that I am using to customize in order to get the required channel length. So, I have to modify the silvaco Code to get what I want. But the problem is there is no much reference material and it is like shooting in the dark. Could any one help me and let me know which specific part of the code do I need to change? Please help and I will be forever grateful.

This is a very quick rough 65nm PMOS with comments. Let me know if you need any further explanations:go athena##To allow changing device size, set the gate length as a variableset Lg=0.065##Set up a mesh suitable for a 65nm MOSFET. Thank you so much for the kind help Colbhaidh, I am really grateful.Please allow me to ask the following:Q1. According to ITRS (International Technology Roadmap for Semiconductors), we cannot just reduce the gate length (by the way, when we say for e.g a 65 nm p-MOS, do we mean the gate is 65 nm or is it the channel length) but we should also scale other parameters such as:1.

Threshold voltage2. Gate oxide thickness3. Junction depth4. Junction depth at the source5. Junction depth at the drain6.

Contact Junction depth7. Channel dopant concentration.and some other parameters.Hence, which parts of the code govern the above said parameters?Q2. In the part of the code that says:'#nwell formation for the body of the pmos transistor. The shallowest implant#will define the threshold voltage so vary to get desired threshold.implant phos dose=2.6E13 energy=420 tilt=5implant phos dose=3.5E13 energy=50 tilt=5'why do we have two statements? In the original example given in Silvaco, there is only one statement. Also, what does 'shallowest implant' mean?Q2. Is the part of the code that says:#Etch the poly gateetch poly right p1.x= 0.5.$lgthe statement that determines the gate length solely?

Are there other statements that control this too?I apologize if I asked too many questions and I hope that you will be able to lend me a hand with this as your kind help is much appreciated. OK First thing: the only stupid question in the universe is the one that was never asked!For a 65nm process, this generally refers to the physical gate length of the poly, so the actual channle length is much lower (40nm).Having said that, many Semiconductor companies claim to have a 65 nm process that is actually a 90nm physical gate length with a 65nm electrical gate length. Fortunatley, this is rare.Threshold voltage is an adjustable parameter. Since Idsat is determined by threshold voltage, you want the lowest threshold voltage.

However Off state leakage is also determined by threshold voltage so you want the highest threshold voltage. So Threshold voltage is a compromise.

The body effect of two mos transistor is series (say for an AND gate) also means the threshold voltage has to be such that a circuit will work, so 500mV-700mV is typical to allow logic gates to be reliably formed. But if your Vdd is 1.2V and threshold is 600mV then your overhead is pretty badly reduced.Gate oxide thickness is also a parameter for threshold voltage so physics determines that it must be thin for 65nm.

Howevber if it is too thin it will conduct current (and self destruct as a consequence) so again their is a compromise. This is controlled by the Gate Oxide diffuse statements in the code above.Junction depth itself is not the problem, but the deeper the junction, the more lateral diffusion of the junction and the effective gate length decreases to the point the transistor is shorted.

So junction depth is the maximum possible without that lateral diffusion that causes the effective gate length to be unusable. For 65nm this is very shallow.

This is controlled by the implant dose and energy in the P+ implant statements ain the code. Just change the implant energy in the TCAD to see the effect of deeper junctions!Channel doping determines the threshold voltage but also contributes to the off state leakage and breakdown between drain and source. This is why 65nm and smaller uses lower voltages. A 65nm transistor would be shoirted at 3.3V but operates well at 1.2V.Now the breakdown between source and drain you want this to happen below the surface of the channel (deep in the bulk) for reliability reasons. To do this you can change the doping of the NWell with depth by using 2 or more implants. The higher the energy of the implant the deeper it will go so9 in the code there are two implants: one with higher energy for the deep part of the NWell the other lower energy to determine the surface channel doping and hence the threshold voltage.

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In a real process, I would probably use 3 implants.Silvaco examples are very simple and rarely reflect the real world.Gate physical length is controlled by etching the gate poly so this does determine the gate length alone. But the electrical gate length is controlled by the lateral diffusion of the P+ implanbt under the gate poly.

Thanks once more for the VERY elaborate and detailed help. I'm now very comfortable with gate length modification. I've tried modifying the following1. Gate oxide thickness2. Threshold voltagefor the gate oxide thickness, I tried to scale it down from (0.00371855 A°to 0.001A°, which is given by ITRS table) but the values stagnated at 0.002A°. I've changed all the Tox statements in the code. What could be the problem?The threshold voltage also seems to be randomly fluctuating when I modify the Vth Adjust implant statement.

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Mathematically,Vth = Vto +γ( √(Vsb + 2Φ)- √2Φ)and,γ= (Tox/εox)√(2qεNa).Hence, shouldn't the Thickness Tox, be affecting the Threshold voltage?I am also getting a positive value for Vth, which I guess should be -ve since I am dealing with PMOS.The code doesn't include 'extract parameter'.So I included the following statements which I took from Silvaco example codes:# Extract other design parameters.# extract final S/D Xj.extract name='pxj' xj silicon mat.occno=1 x.val= 0.1 junc.occno=1# extract the long chan Vt.extract name='p1dvt' 1dvt ptype vb=0.0 qss=1e10 x. A gate oxide thickness of 0.00371855 A° is much less than the diameter of 1 atom so this is very wrong.a 65nm process has a gate thickness of about 1.8nm or more (18A°).The following gives a 15nm gate oxide with a VT of 0.18Vgo athena##To allow changing device size, set the gate length as a variableset Lg=0.065##Set up a mesh suitable for a 65nm MOSFET. Dear colbhaidThanks a ton! I hope you had very happy holidays:)Here is a code for 100 nm process (it is based on Silvaco examples 9 and 8), it seems that everything is ok but the threshold voltage seems to be very large. Also, when I use two extract statements for Tox (1 right after gate oxide growth and another right before other extract statements), the first one stays invariably the same no matter what value(s) I alter, while the second one varies slightly.

BTW, I use the results produced in results.final file for all parameters (Vth, Tox, junction depth.etc) Hence, results.final says the following. Code: gateox=20 angstroms (0.002 um) X.val=0.005-first Tox resultgateox=17.7442 angstroms (0.00177442 um) X.val=0.005-second onep1dvt=2.6415e+14 V X.val=0.49- very strange value of VthFor this process, a Vth of 0.2 V, a gate oxide of 1.5-2 nm, and junction depth of 40 - 80 nm are required. Could you please lend a hand in getting these values? (at least the first two, while keeping the Vgs vs Ids curve the same)btw, you seem to not use extract statements. How do you find Tox and Vth?is Devedit the one that produced the graph you provided (and calculated the max slope)?Thanks again and I am looking forward to your kind help. Here is the code:-# This is a simple input deck representing a Process flow and a device# test.

Give me some time to look at your code.Use my code for the gate oxide. For 130nm and beyond, the process switched to Rapid Thermal Processing (RTP) which uses halogen lamps to ramp the wafer temperature at 100oC per minute to 1000oC or thereabouts in an oxygen ambient.This requires the:oxide init=0.0001which overides the simulator native oxide. This allows oxides. Hello again,I've attached here a file that contains analysis of the effect of N-well implant on threshold voltage. I've varied the following parameters in the ' mos1ex08.in: Id/Vgs and Threshold Voltage Extraction' Silvaco example:1. Type of impurity:-amorphous Phosphorus-amorphous Arsenic2. Dose level:-dose=9e10-dose=9e11-dose=9e12-dose=9e13-dose=9e143.

Energy:energy=20 pearsenergy=60 pearsenergy=100 pearsenergy=140 pearsenergy=180 pearsThe graphs of the Threshold voltage are as attached. My question is, what are the underlying reasons behind the patterns that these variations produce? For example, the device which is doped with phosphorus has slightly higher and faster threshold voltage compared to the one doped with arsenic. It is known that arsenic atoms are much larger than those of phosphorus atoms. Hence, could this be the reason why phosphorus doping gives this trend? How about the Energy and Dose levels?Thank you again and again for all the support, and hope to hear from you soon.

Thanks again for the much needed and highly appreciated reply.The code for my previous analysis is as attached. It is merely example no. 8 of Silvaco examples, and is for PMOS. I've highlighted the statement that have been varied, which is the N-well implant statement.On the other hand, in the reply #7 above, you've provided the code for a 65nm process with a Vth of appox.

0.185 and gate oxide thickness of 1.5. I was able to successfully run the code and the results were quite satisfactory. Unfortunately, I was hospitalized last week due to internal ear bleeding. Thus, I couldn't do one of last tasks, which is to vary the gate oxide thickness and provide the resulting changes in the Vth curve (a Tonyplot overlay of around 5 curves for 5 values is need).I would be very thankful if you could help me with this as I can't access the lab at the moment.

The code is also attached here (title is: 65nm code) or you may refer to post #7 above. The values of gate oxide thickness could be two values above and two values below the optimized oxide thickness value (1.5nm), which are: (1.3nm, 1.4nm, 1.5nm, 1.6nm, 1.7nm).Thanks once more for the help. Hello,After running the 65 nm code (the one you provided in reply #7), the structure seems to be turned off. Every thing else seems ok (threshold voltage, gate length, gate oxide thickness.etc) but this is the only thing that seems a little bit shady. I've attached a screen shot of the resulting structure.it seems reddish while it normally seems 'glowing' or blue. I've encountered this kind of problem before, and I used to solve it by adjusting the device dimensions/range. But I was not successful this time (could it be due to the plotting statements that I used?

The original code didn't include them so I had to borrow from another code).Hope you can help out with this matter.Thanks alot. To vary the gate oxide thickness, just change the gate oxidation process as follows:#Tox 1.7 diffuse temp=1000 seconds time=30 dryo2#Tox 1.6 diffuse temp=1000 seconds time=28 dryo2#Tox 1.5 diffuse temp=1000 seconds time=26 dryo2#Tox 1.4 diffuse temp=1000 seconds time=24 dryo2#Tox 1.3 diffuse temp=1000 seconds time=22 dryo2Remember this device is very simplistic so check the results carefully.With regards to TONYPLOT, your plot shows doping contours, nothing else. To see the device in action, change the contours to potential and then to total current density to see the device in action.

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